Debasree Chowdhury

She holds a Ph.D. in Doctor of Philosophy - Saha Institute of Nuclear Physics (2017). Currently she is postdoctoral research associate - Variable Energy Cyclotron Center. Her research interest is on ion soli4 interaction, especially, semiconductor surface nanopatterning.

Informações coletadas do Lattes em 29/10/2024

Acadêmico

Formação acadêmica

Doutorado em Doctor of Philosophy

2010 - 2017

Saha Institute of Nuclear Physics, SAHA, Índia
Título: Semiconductor surface nanopatterning by low energy ion beam sputtering
Orientador: Prof. Debabrata Ghose

Ensino Médio (2º grau) em andamento

2017 - Atual

Variable Energy Cyclotron Centre, VECC, Índia

Pós-doutorado

2017

Pós-Doutorado. , Variable Energy Cyclotron Centre, VECC, Índia. , Bolsista do(a): Variable Energy Cyclotron Center, VECC, Índia. , Grande área: Ciências Exatas e da Terra

2016 - 2016

Pós-Doutorado. , Saha Institute of Nuclear Physics, SAHA, Índia. , Bolsista do(a): Saha Institute of Nuclear Physics, SINP, Índia.

Idiomas

Bandeira representando o idioma Inglês

Compreende Bem, Fala Bem, Lê Bem, Escreve Bem.

Hindi

Compreende Bem, Fala Bem, Lê Bem, Escreve Bem.

Bengali

Compreende Bem, Fala Bem, Lê Bem, Escreve Bem.

Áreas de atuação

Grande área: Ciências Exatas e da Terra / Área: Física / Subárea: Physics.

Produções bibliográficas

  • 2016 Chowdhury, Debasree ; GHOSE, DEBABRATA . Tuning of Nanopatterns on Si (100) Substrate: Role of Ion Beam Processing Parameters During Sputtering. ADVANCED SCIENCE LETTERS , v. 22, p. 105-110, 2016.

  • 2016 Chowdhury, Debasree ; GHOSE, DEBABRATA . Highly-ordered ripple structure induced by normal incidence sputtering on monocrystalline GaAs (001): ion energy and flux dependence. VACUUM , v. 129, p. 122-125, 2016.

  • 2016 Chowdhury, Debasree ; GHOSE, DEBABRATA . Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature. APPLIED SURFACE SCIENCE , v. 385, p. 410-416, 2016.

  • 2016 Chowdhury, Debasree ; SATPATI, BISWARUP ; GHOSE, DEBABRATA . Temperature and high fluence induced ripple rotation on Si(100) surface. Materials Research Express , v. 3, p. 125003, 2016.

  • 2016 Chowdhury, Debasree ; GHOSE, DEBABRATA . Fabrication of Anisotropic Regular Nanostructures on GaAs Surface due to Normal Incidence Ion Irradiation: A study on Temperature Dependence. IOP CONFERENCE SERIES: MATERIALS SCIENCE AND ENGINEERING (PRINT) , v. 149, p. 012189, 2016.

  • 2015 Chowdhury, Debasree ; GHOSE, DEBABRATA . Super-roughening scaling behaviour of Si surface morphology at grazing incidence low energy ion beam sputtering. APPLIED SURFACE SCIENCE , v. 324, p. 517-524, 2015.

  • 2015 Chowdhury, Debasree ; GHOSE, DEBABRATA ; MOLLICK, SAFIUL ALAM ; SATPATI, BISWARUP ; BHATTACHARYYA, SATYA RANJAN . Nanorippling of ion irradiated GaAs (001) surface near the sputter-threshold energy. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS , v. 252, p. 811-815, 2015.

  • MONDAL, S. ; DAS, P. ; Chowdhury, Debasree ; BHATTACHARYYA, S. . Characterization of submonolayer film composed of soft-landed copper nanoclusters on HOPG. AIP CONFERENCE PROCEEDINGS , v. 1665, p. 140040, 2015.

  • 2014 Chowdhury, Debasree ; SATPATI, BISWARUP . Production of ordered and pure Si nanodots at grazing ion beam sputtering under concurrent substrate rotation. Materials Science and Engineering B-Advanced Functional Solid-State Materials , v. 179, p. 1-5, 2014.

  • Chowdhury, Debasree ; GHOSE, D. . Hexagonally ordered nanodots: Result of substrate rotation during oblique incidence low energy IBS. AIP CONFERENCE PROCEEDINGS , v. 1591, p. 1030, 2014.

  • 2014 Chowdhury, Debasree ; GHOSE, DEBABRATA ; MOLLICK, SAFIUL ALAM . Homoepitaxy of germanium by hyperthermal ion irradiation. VACUUM , v. 107, p. 23-27, 2014.

  • Chowdhury, Debasree ; GHOSE, D. . High fluence effect on Si ripple morphology developed by low energy ion beam sputtering. AIP CONFERENCE PROCEEDINGS , v. 1536, p. 353, 2013.

  • Chowdhury, Debasree ; GHOSE, DEBABRATA . Fabrication of nanoscale topographies on Ge(100) surface by low energy Ar + ion sputtering. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS , 2017.

  • Chowdhury, Debasree ; GHOSE, D. . Highly Regular Arrays of Faceted Nanostructure Formation on Semiconductor Surfaces by Reverse Epitaxy during Ion Beam Sputtering. 2017. (Apresentação de Trabalho/Outra).

  • Chowdhury, Debasree ; GHOSE, D. . Fabrication of Anisotropic Regular Nanostructures on GaAs Surface due to Normal Incidence Ion Irradiation: A study on Temperature Dependence. 2016. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . Ion Irradiation Induced Highly Periodic and Crystalline Semiconductor Nanopatterns: From Reverse Epitaxy to Erosion Kinetics.. 2016. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . Si Surface Nanopatterning by Low Energy Ion Etching Method.. 2015. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . Homoepitaxy of germanium by hyperthermal ion irradiation. 2014. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . Tuning Nanopatterns on Si substrate: Role of Ion Beam Processing Parameters During Low Energy Ion Beam Sputtering. 2014. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . High Fluence Effect on Si Ripple Morphology Developed by LEIBS. 2013. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . Self-organized ordered nanodots on Si(100) surface by low energy ion beam sputtering. 2013. (Apresentação de Trabalho/Conferência ou palestra).

  • Chowdhury, Debasree ; GHOSE, D. . Hexagonally ordered nanodots: Result of substrate rotation during oblique incidence low energy IBS. 2013. (Apresentação de Trabalho/Simpósio).

  • Chowdhury, Debasree ; GHOSE, D. . Production of nanodots at low energy oblique incidence ion sputtering. 2012. (Apresentação de Trabalho/Outra).

  • Chowdhury, Debasree ; GHOSE, D. . Evolution on Si Surface morphology as Function of Different Processing Parameters during LEIBS. 2012. (Apresentação de Trabalho/Outra).

Prêmios

2015

Young Scientist Award, Materials Research Society of India (MRSI).

2015

Best paper presentation award, 3rd International Conference on Nanoscience and Nanotechnology - ICONN 2015 held at SRM University.

2012

First prize for Best poster, Conference cum Workshop in Electron microscopy held at Benares Hindu University..

Histórico profissional

Endereço profissional

  • Saha Institute of Nuclear Physics. , Sector 1, Block AF, Bidhannagar, North 24 Parganas, 700064 - Kolkata, - Índia, Telefone: (033) 23371230

Experiência profissional

2017 - Atual

Variable Energy Cyclotron Centre, VECC, Índia

Vínculo: Scholarship, Enquadramento Funcional: Post doctoral research associate