Caio Cesar Mendes Bordallo

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Produções bibliográficas

• CAPARROZ, LUIS FELIPE VICENTIS ; BORDALLO, CAIO CESAR MENDES ; MARTINO, JOAO ANTONIO ; SIMOEN, EDDY ; CLAEYS, COR ; DER AGOPIAN, PAULA GHEDINI . Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , v. 33, p. 065003, 2018.

• BORDALLO, C. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ALIAN, A. ; MOLS, Y. ; ROOYACKERS, R. ; VANDOOREN, A. ; VERHULST, A. ; MOCUTA, D. ; LIN, D. ; SIMOEN, E. ; CLAEYS, C. ; COLLAERT, N. . The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques , v. 18, p. 1, 2018.

• BORDALLO, CAIO C. M. ; MARTINO, JOAO ANTONIO ; AGOPIAN, PAULA G. D. ; ALIAN, ALIREZA ; MOLS, YVES ; ROOYACKERS, RITA ; VANDOOREN, ANNE ; VERHULST, ANNE S. ; SIMOEN, EDDY ; CLAEYS, COR ; COLLAERT, NADINE . The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1-xAs nTFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES , v. 64, p. 1-6, 2017.

• ALIAN, A. ; MOLS, Y. ; BORDALLO, C. C. M. ; VERRECK, D. ; VERHULST, A. ; VANDOOREN, A. ; ROOYACKERS, R. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; THEAN, A. ; LIN, D. ; MOCUTA, D. ; COLLAERT, N. . InGaAs tunnel FET with sub-nanometer EOT and sub-60-mV/dec sub-threshold swing at room temperature. APPLIED PHYSICS LETTERS , v. 109, p. 243502, 2016.

• BORDALLO, CAIO C. M. ; SIVIERI, VICTOR B. ; MARTINO, JOAO ANTONIO ; AGOPIAN, PAULA G. D. ; ROOYACKERS, RITA ; VANDOOREN, ANNE ; SIMOEN, EDDY ; VOON-YEW THEAN, AARON ; CLAEYS, COR . Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE TRANSACTIONS ON ELECTRON DEVICES , v. 63, p. 2930-2935, 2016.

• BORDALLO, C ; MARTINO, J A ; AGOPIAN, P G D ; ALIAN, A ; MOLS, Y ; ROOYACKERS, R ; VANDOOREN, A ; VERHULST, A S ; SMETS, Q ; SIMOEN, E ; CLAEYS, C ; COLLAERT, N . Analog parameters of solid source Zn diffusion In X Ga 1− X As nTFETs down to 10 K. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , v. 31, p. 124001, 2016.

• TEIXEIRA, F. F. ; BORDALLO, C. ; SILVEIRA, M. A. G. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. . Parasitic Conduction Response to X-ray Radiation in Unstrained and Strained Triple-Gate SOI MuGFETs. JICS. Journal of Integrated Circuits and Systems (Ed. Português) , v. 9, p. 97-102, 2014.

• BORDALLO, C C M ; TEIXEIRA, F F ; SILVEIRA, M A G ; MARTINO, J A ; AGOPIAN, P G D ; SIMOEN, E ; CLAEYS, C . Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation. Semiconductor Science and Technology (Print) , v. 29, p. 125015, 2014.

• AGOPIAN, P. G. D. ; BORDALLO, C. C. M. ; SIMOEN, E. ; CLAEYS, C. ; MARTINO, J. A. . Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. SOLID-STATE ELECTRONICS , p. 155-159, 2013.

• BORDALLO, C. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ALIAN, A. ; MOLS, Y. ; ROOYACKERS, R. ; VANDOOREN, A. ; VERHULST, A. S. ; SIMOEN, E. ; CLAEYS, C. ; COLLAERT, N. . Analysis of different source materials on the drain current of nTFETs. In: XII Workshop on Semiconductors and Micro & Nano Technology - SEMINATEC, 2017, São Paulo. proceedings of XII Workshop on Semiconductors and Micro & Nano Technology - SEMINATEC, 2017. p. 1.

• BORDALLO, C. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ALIAN, A. ; MOLS, Y. ; ROOYACKERS, R. ; VANDOOREN, A. ; VERHULST, A. S. ; SIMOEN, E. ; CLAEYS, C. ; COLLAERT, N. . Analysis of the transistor efficiency of gas phase Zn diffusion In 0.53 Ga 0.47 As nTFETs at different temperatures. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOIULIS), 2017, Athens. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017. p. 109.

• CAPARROZ, L.F.V. ; BORDALLO, C. C. M. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. ; AGOPIAN, P. G. D. . Low temperature performance of proton irradiated strained SOI FinFET. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOIULIS), 2017, Athens. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2017. p. 61.

• BORDALLO, C. ; MARTINO, J. ; AGOPIAN, P. ; ALIAN, A. ; MOLS, Y. ; ROOYACKERS, R. ; VANDOOREN, A. ; VERHULST, A. ; SIMOEN, E. ; CLAEYS, C. ; COLLAERT, N. . Impact of the Zn diffusion process at the source side of In x Ga 1−x As nTFETs on the analog parameters down to 10 K. In: 2017 IEEE SOI3DSubthreshold Microelectronics Technology Unified Conference (S3S), 2017, Burlingame. 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017. p. 1.

• BORDALLO, C. C. M. ; SIVIERI, V. B. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ROOYACKERS, R. ; VANDOOREN, A. ; SIMOEN, E. ; THEAN, A. ; CLAEYS, C. . Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes. In: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOIULIS), 2016, Wien. 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016. p. 242-245.

• BORDALLO, C. ; MARTINO, J. ; AGOPIAN, P. ; ALIAN, A. ; MOIS, Y. ; ROOYACKERS, R. ; VANDOOREN, A. ; VERHULST, A. ; SIMOEN, E. ; CLAEYS, C. ; COLLAERT, N. ; THEAN, A. . Impact of In x Ga 1−x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs. In: 2016 IEEE SOI3DSubthreshold Microelectronics Technology Unified Conference (S3S), 2016, Burlingame. 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2016. p. 1.

• NASCIMENTO, VINICIUS M. ; AGOPIAN, PAULA G. D. ; ALMEIDA, LUCIANO M. ; BORDALLO, CAIO C. M. ; SIMOEN, EDDY ; CLAEYS, COR ; MARTINO, JOAO A. . Influence of proton radiation and strain on nFinFET zero temperature coefficient. In: 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 2016, Belo Horizonte. 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 2016. p. 1.

• BORDALLO, C. C. M. ; SIVIERI, V. B. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ROOYACKERS, R. ; VANDOOREN, A. ; SIMOEN, E. ; THEAN, A. ; CLAEYS, C. . Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters. In: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOIULIS), 2015, Bologna. EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015. p. 253-256.

• SIVIERI, V. B. ; BORDALLO, C. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; ROOYACKERS, R. ; VANDOOREN, A. ; SIMOEN, E. ; THEAN, A. ; CLAEYS, C. . Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions. In: 227rd ECS Meeting, E6 Advanced Semiconductor-on-Insulator Technology and Related Physics, 2015, Chicago. ECS Transactions, 2015. v. 66. p. 187-192.

• BORDALLO, CAIO C. M. ; MARTINO, JOAO A. ; AGOPIAN, PAULA G. D. ; ROOYACKERS, R. ; VANDOOREN, A. ; THEAN, A. ; SIMOEN, EDDY ; CLAEYS, COR . Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures. In: 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 2015, Salvador. 2015 30th Symposium on Microelectronics Technology and Devices (SBMicro), 2015. p. 1.

• BORDALLO, C. C. M. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; SIMOEN, E. ; CLAEYS, C. . The effect of stress and proton radiation on the ION/IOFF ratio of nMuGFETs. In: IX Workshop on Semiconductors and Micro & Nano Technology - SEMINATEC, 2014, São Paulo. proceedings of IX Workshop on Semiconductors and Micro & Nano Technology. São Paulo, 2014.

• BORDALLO, C. C. M. ; TEIXEIRA, F. F. ; SILVEIRA, M. A. G. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; SIMOEN, E. ; CLAEYS, C. . The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs. In: 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), 2014, Playa del Carmen. 2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS), 2014. p. 1.

• BORDALLO, CAIO C. M. ; TEIXEIRA, FERNANDO F. ; SILVEIRA, MARCILEI A. G. ; MARTINO, JOAO A. ; AGOPIAN, PAULA G. D. ; SIMOEN, EDDY ; CLAEYS, COR . The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters. In: 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro), 2014, Aracaju. 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro), 2014. p. 1.

• BORDALLO, C. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. . Radiation Influence on Biaxial+Uniaxial Strained Silicon MuGFETs. In: 222nd ECS Meeting - High Purity Silicon 12., 2013, Honolulu. ECS Transactions - High Purity Silicon 12. Pennington, NJ, USA: The Electrochemical Society, 2013. v. 50. p. 205-212.

• BORDALLO, C. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. . Temperature Influence on Strained nMuGFETs after Proton Radiation. In: 223rd ECS Meeting, E6 Advanced Semiconductor-on-Insulator Technology and Related Physics 16, 2013, Toronto. ECS Transactions.. Pennington, NJ: The Electrochemical Society, 2013.

• BORDALLO, C. C. M. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. . The effect of temperature, stress and proton radiation on the off-state current of nMuGFETs. In: VIII Workshop on Semiconductors and Micro & Nano Technology - SEMINATEC 2013, 2013, Campinas. SEMINATEC 2013, 2013.

• TEIXEIRA, FERNANDO F. ; BORDALLO, CAIO C. M. ; SILVEIRA, MARCILEI A. G. ; AGOPIAN, PAULA G. D. ; MARTINO, JOAO A. ; SIMOEN, EDDY ; CLAEYS, COR . Radiation effect on standard and strained triple-gate SOI FinFETs parasitic conduction. In: 2013 Symposium on Microelectronics Technology and Devices (SBMicro), 2013, Curitiba. 28th Symposium on Microelectronics Technology and Devices (SBMicro 2013), 2013. p. 1.

• BORDALLO, C. C. M. ; TEIXEIRA, F. F. ; SILVEIRA, M. A. G. ; AGOPIAN, P. G. D. ; SIMOEN, E. ; CLAEYS, C. ; MARTINO, J. A. . Influence of X-ray radiation on standard and uniaxial strained triple-gate SOI FinFETs. In: 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013, Oxford. 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2013. p. 1.

• AGOPIAN, P. G. D. ; BORDALLO, C. ; SIMOEN, E. ; CLAEYS, C. ; MARTINO, J. A. . The influence of different stress techniques and proton radiation on GIDL in triple-gate SOI Devices. In: VIII Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits - EuroSOI 2012, 2012, Montpellier. Proceedings of EuroSOI 2012. Montpellier: línstitut délectronique, 2012., 2012. p. 51-52.

• OLIVEIRA, A. V. ; BORDALLO, C. ; AGOPIAN, P. G. D. . Estudo comparativo dos parâmetros básicos de transistores SOI nMOSFETs. In: Simposio Internacional de Iniciação Científica da USP, 2012, São Paulo. Simposio Internacional de Iniciação Científica da USP, 2012, 2012.

• OLIVEIRA, A. V. ; BORDALLO, C. ; AGOPIAN, P. G. D. . Influência de cargas e armadilhas na tensão de limiar de transistores PD e FD SOI NMOSFETS. In: 14 º Simpósio de Iniciação Científica e Tecnológica, 2012, São Paulo. Boletim Técnico da Faculdade de Tecnologia de São Paulo. Sao Paulo: FATEC-SP, 2012. v. 34. p. 53-53.

• BORDALLO, C. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ALIAN, A. ; MOLS, Y. ; ROOYACKERS, R. ; VANDOOREN, A. ; VERHULST, A. S. ; SIMOEN, E. ; CLAEYS, C. ; COLLAERT, N. . Analysis of different source materials on the drain current of nTFETs. 2017. (Apresentação de Trabalho/Seminário).

• BORDALLO, C. ; SIVIERI, V. B. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ROOYACKERS, R. ; VANDOOREN, A. ; SIMOEN, E. ; THEAN, A. ; CLAEYS, C. . Influence of the Ge amount at source on transistor efficiency of vertical gate all around TFET for different conduction regimes. 2016. (Apresentação de Trabalho/Congresso).

• BORDALLO, C. ; SIVIERI, V. B. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ROOYACKERS, R. ; VANDOOREN, A. ; SIMOEN, E. ; THEAN, A. ; CLAEYS, C. . Impact of the diameter of vertical nanowire-tunnel FETs with Si and SiGe source composition on analog parameters. 2015. (Apresentação de Trabalho/Congresso).

• BORDALLO, C. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; ROOYACKERS, R. ; VANDOOREN, A. ; THEAN, A. ; SIMOEN, E. ; CLAEYS, C. . Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures. 2015. (Apresentação de Trabalho/Congresso).

• BORDALLO, C. ; TEIXEIRA, F. F. ; SILVEIRA, M. A. G. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; SIMOEN, E. ; CLAEYS, C. . The effect of X-Ray radiation on DIBL for standard and strained triple-gate SOI MuGFETs. 2014. (Apresentação de Trabalho/Congresso).

• BORDALLO, C. ; TEIXEIRA, F. F. ; SILVEIRA, M. A. G. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; SIMOEN, E. ; CLAEYS, C. . The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters. 2014. (Apresentação de Trabalho/Congresso).

• BORDALLO, C. ; TEIXEIRA, F. F. ; SILVEIRA, M. A. G. ; MARTINO, J. A. ; AGOPIAN, P. G. D. ; SIMOEN, E. ; CLAEYS, C. . The effect of stress and proton radiation on the ION/IOFF ratio of nMuGFETs. 2014. (Apresentação de Trabalho/Simpósio).

• BORDALLO, C. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. . Temperature Influence on Strained nMuGFETs after Proton Radiation. 2013. (Apresentação de Trabalho/Congresso).

• BORDALLO, C. C. M. ; AGOPIAN, P. G. D. ; MARTINO, J. A. ; SIMOEN, E. ; CLAEYS, C. . VIII Workshop on Semiconductors and Micro & Nano Technology - SEMINATEC 2013. 2013. (Apresentação de Trabalho/Simpósio).

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