Adrian Nelson Vaisman Chasin

Atualmente é R&D Team Leader Front-End Reliability & Principal Member of technical staff (PMTS) at Interuniversity Microelectronics Centre - Bélgica. Doutor em Engenharia Elétrica pela Katholieke Universiteit Leuven (K.U.Leuven, Bélgica) e Interuniversity Microelectronics Centre (IMEC,Bélgica). Graduado em engenharia elétrica pela Universidade Federal de Minas Gerais.Foi participante do programa de intercâmbio CAPES-BRAFITEC, tendo cursado o quarto ano do curso (Master 1) de Engenharia Eletrônica na ESIEE-Paris (École Supérieure d'Ingénieurs en Électronique et Électrotechnique, França), com ênfase na área de microeletrônica. Mestre em Engenharia Elétrica com ênfase em Nanociência e Nanotecnologia pela Katholieke Universiteit Leuven (KULeuven), realizou a pesquisa da dissertação no Interuniversity Microelectronics Centre (IMEC), Bélgica, no desenvolvimento de memória orgânica não-volátil. Desde 2010, desenvolve pesquisas na área de eletrônica maleável e transparente, baseada em dispositivos com semicondutores alternativos, tais como orgânicos e óxidos de metal. Além de ter se dedicado a diversos projetos acadêmicos na área de eletrônica e controle, realizou também estágios em diferentes empresas de semicondutores e eletrônica, tais como Freescale Semicondutor (Toulouse, França) e Photoveltech (Bélgica). Trabalhou como Research Scientist at NXP Semiconductors (Bélgica)

Informações coletadas do Lattes em 05/04/2026

Acadêmico

Formação acadêmica

Doutorado em Engenharia Elétrica

2010 - 2014

Katholieke Universiteit Leuven, KU Leuven
Título: Amorphous metal-oxide semicondutor based thin-film electronic devices for RF applications on foil
Orientador: Paul Heremans
Coorientador: Georges Gielen. Bolsista do(a): Katholieke Universiteit Leuven, KUL, IMEC, Bélgica. Palavras-chave: IGZO; Semicondutor oxido de metal; Eletrônica Flexivel; metal-oxide semiconductor; RF applications; thin film devices. Grande área: EngenhariasGrande Área: Engenharias / Área: Engenharia Elétrica / Subárea: Circuitos Elétricos, Magnéticos e Eletrônicos / Especialidade: Circuitos Eletrônicos. Grande Área: Engenharias / Área: Engenharia Elétrica / Subárea: NANOTECNOLOGIA. Setores de atividade: Fabricação de equipamentos de informática, produtos eletrônicos e ópticos.

Mestrado em Master in Nanoscience and Nanotechnology

2008 - 2010

Katholieke Universiteit Leuven, KU Leuven
Título: Organic memory transistors with a polymer ferro-electric gate dielectric., Ano de Obtenção: 2010
Orientador: Paul Heremans
Palavras-chave: Memoria orgânica; Semicondutor Orgânico.Grande área: EngenhariasGrande Área: Engenharias / Área: Engenharia Elétrica / Subárea: Materiais Elétricos / Especialidade: Materiais e Componentes Semicondutores. Setores de atividade: Fabricação de equipamentos de informática, produtos eletrônicos e ópticos.

Graduação em Engenharia Elétrica

2006 - 2007

Universidade Federal de Minas Gerais
Título: Développement d?un Package de test au Probe
Orientador: Philippe BASSET
com Bolsista do(a): Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, CAPES, Brasil.

Graduação em Engenharia Elétrica

2003 - 2008

Universidade Federal de Minas Gerais

Idiomas

Inglês

Compreende Bem, Fala Bem, Lê Bem, Escreve Bem.

Francês

Compreende Bem, Fala Bem, Lê Bem, Escreve Bem.

Holandês

Compreende Bem, Fala Razoavelmente, Lê Razoavelmente, Escreve Razoavelmente.

Áreas de atuação

Grande área: Engenharias / Área: Engenharia Elétrica / Subárea: Microeletrônica.

Grande área: Engenharias / Área: Engenharia Elétrica / Subárea: Memory reliability.

Grande área: Engenharias / Área: Engenharia Elétrica / Subárea: Materials and Components Semiconductors.

Grande área: Engenharias / Área: Engenharia Elétrica / Subárea: Control of Electronic Processes, Feedback.

Grande área: Engenharias / Área: Engenharia Elétrica / Subárea: Electric Engineering.

Grande área: Engenharias / Área: Engenharia Elétrica / Subárea: Electronic Circuits.

Participação em eventos

http://ieeexplore.ieee.org/abstract/document/6828771/. Bidirectional Communication in an HF Hybrid Organic/Solution-Processed Metal-Oxide RFID Tag. 2014. (Congresso).

IEEE Transactions on Electron Devices. An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags. 2014. (Congresso).

VLSI Technology, 2016 IEEE Symposium on. Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates. 2014. (Congresso).

EEE Transactions on Electron Devices. Gigahertz Operation of a-IGZO Schottky Diodes. 2013. (Congresso).

Electron Devices Meeting (IEDM), 2012 IEEE International. UHF IGZO Schottky diode. 2012. (Congresso).

SBMicro 2008. Multi-Efficiency Position-Sensitive Detector with Linearized Response. 2008. (Congresso).

SEMINATEC. Triple-Efficiency Optical Quad-Cell with Linearized Response. 2008. (Congresso).

Produções bibliográficas

RINAUDO, P. ; Chasin, A. ; FRANCO, J. ; WU, Z. ; SUBHECHHA, S. ; ARUTCHELVAN, G. ; ENEMAN, G. ; RAMANA, B. Y. V. ; RASSOUL, N. ; DELHOUGNE, R. ; KACZER, B. ; WOLF, I. DE ; KAR, G.S. . Degradation mapping and impact of device dimension on IGZO TFTs BTI. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY , v. 1, p. 1-1, 2023.
LEE, KOOKJIN ; CHOI, JUNHEE ; KACZER, BEN ; GRILL, ALEXANDER ; LEE, JAE WOO ; VAN BEEK, SIMON ; BURY, ERIK ; DIAZ'FORTUNY, JAVIER ; CHASIN, ADRIAN ; LEE, JAEWOO ; CHUN, JUNGU ; SHIN, DONG HOON ; NA, JUNHONG ; CHO, HYERAN ; LEE, SANG WOOK ; KIM, GYU'TAE . Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS Transistor. ADVANCED FUNCTIONAL MATERIALS , v. 1, p. 2100625, 2021.
TYAGINOV, S. ; MAKAROV, A. ; Chasin, A. ; BURY, E. ; VANDEMAELE, M. ; JECH, M. ; GRILL, A. ; DE KEERSGIETER, A. ; LINTEN, D. ; KACZER, B. . The impact of self-heating and its implications on hot-carrier degradation - A modeling study. MICROELECTRONICS RELIABILITY , v. 122, p. 114156, 2021.
KIM, YEONSU ; KACZER, BEN ; VERRECK, DEVIN ; GRILL, ALEXANDER ; KIM, DOYOON ; SONG, JAEICK ; DIAZ'FORTUNY, JAVIER ; VICI, ANDREA ; PARK, JONGSEON ; VAN BEEK, SIMON ; SIMICIC, MARKO ; BURY, ERIK ; CHASIN, ADRIAN ; LINTEN, DIMITRI ; LEE, JAEWOO ; CHUN, JUNGU ; KIM, SEONGJI ; SEO, BEUMGEUN ; CHOI, JUNHEE ; SHIM, JOON HYUNG ; LEE, KOOKJIN ; KIM, GYU'TAE . Cyclic Thermal Effects on Devices of Two-Dimensional Layered Semiconducting Materials. Advanced Electronic Materials , v. 1, p. 2100348, 2021.
VELOSO, ANABELA ; MATAGNE, PHILIPPE ; ENEMAN, GEERT ; MERTENS, HANS ; CHASIN, ADRIAN ; SIMOEN, EDDY ; HORIGUCHI, NAOTO . Gate-All-Around Nanosheet Field-Effect Transistors for Advanced Logic and Memory Applications: Integration and Device Features. ECS TRANSACTIONS (ONLINE) , v. 97, p. 23-33, 2020.
SIMOEN, EDDY ; CHASIN, ADRIAN ; MATAGNE, PHILIPPE ; ROSSEEL, ERIK ; HIKAVYY, ANDRIY YAKOVITCH ; LOO, ROGER ; FAVIA, PAOLA ; BENDER, HUGO ; VANCOILLE, ERIC ; VELOSO, ANABELA . On the Correlation Between Static and Low-Frequency Noise Parameters of Vertical Nanowire nMOSFETs. ECS TRANSACTIONS (ONLINE) , v. 97, p. 59-64, 2020.
VELOSO, ANABELA ; MATAGNE, PHILIPPE ; JANG, DOYOUNG ; HUYNH-BAO, TRONG ; CHASIN, ADRIAN ; SIMOEN, EDDY ; ENEMAN, GEERT ; DE KEERSGIETER, AN ; MERTENS, HANS ; HORIGUCHI, NAOTO . Gate-All-Around Nanowire & Nanosheet FETs for Advanced, Ultra-Scaled Technologies. ECS TRANSACTIONS (ONLINE) , v. 97, p. 3-14, 2020.
MAKAROV, ALEXANDER ; KACZER, BEN ; ROUSSEL, PHILIPPE ; CHASIN, ADRIAN ; GRILL, ALEXANDER ; VANDEMAELE, MICHIEL ; HELLINGS, GEERT ; EL-SAYED, AL-MOATASEM ; GRASSER, TIBOR ; LINTEN, DIMITRI ; TYAGINOV, STANISLAV . Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs. IEEE ELECTRON DEVICE LETTERS , v. 1, p. 1-1, 2019.
WOSTYN, KURT ; RAGNARSSON, LARS-ÅKE ; ARIMURA, HIROAKI ; CHASIN, ADRIAN ; CONARD, THIERRY ; RONDAS, DIRK ; LOO, ROGER ; HOLSTEYNS, FRANK ; HORIGUCHI, NAOTO . Impact of Ge-Oxide-Scavenging on Low-T Steam Oxidation and Passivation of Bi-Axially Strained Si0.75Ge0.25. ECS TRANSACTIONS (ONLINE) , v. 93, p. 71-72, 2019.
KACZER, B. ; FRANCO, J. ; WECKX, P. ; ROUSSEL, PH.J. ; PUTCHA, V. ; BURY, E. ; SIMICIC, M. ; Chasin, A. ; LINTEN, D. ; PARVAIS, B. ; CATTHOOR, F. ; RZEPA, G. ; WALTL, M. ; GRASSER, T. . A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. MICROELECTRONICS RELIABILITY , v. 81, p. 186-194, 2018.
ROCKELE, MAARTEN ; VASSEUR, KAROLIEN ; MITYASHIN, ALEXANDER ; MULLER, ROBERT ; CHASIN, ADRIAN ; NAG, MANOJ ; BHOOLOKAM, AJAY ; GENOE, JAN ; HEREMANS, PAUL ; MYNY, KRIS . Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications. IEEE TRANSACTIONS ON ELECTRON DEVICES , v. 65, p. 514-519, 2018.
MAKAROV, A. A. ; TYAGINOV, S. E. ; KACZER, B. ; JECH, M. ; Chasin, A. ; GRILL, A. ; HELLINGS, G. ; VEXLER, M. I. ; LINTEN, D. ; GRASSER, T. . Analysis of the Features of Hot-Carrier Degradation in FinFETs. SEMICONDUCTORS , v. 52, p. 1298-1302, 2018.
TYAGINOV, S. E. ; MAKAROV, A. A. ; KACZER, B. ; JECH, M. ; Chasin, A. ; GRILL, A. ; HELLINGS, G. ; VEXLER, M. I. ; LINTEN, D. ; GRASSER, T. . Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs. SEMICONDUCTORS , v. 52, p. 1738-1742, 2018.
WOSTYN, KURT ; KENIS, KARINE ; MERTENS, HANS ; VAISMAN CHASIN, ADRIAN ; HIKAVYY, ANDRIY ; HOLSTEYNS, FRANK ; HORIGUCHI, NAOTO . Low Temperature SiGe Steam Oxide - Aqueous Hf and NH3/NF3 Remote Plasma Etching and its Implementation as Si GAA Inner Spacer. SSP - Solid State Phenomena , v. 282, p. 126-131, 2018.
MERTENS, HANS RITZENTHALER, ROMAIN HIKAVYY, ANDRIY YAKOVITCH KIM, MIN-SOO TAO, ZHENG WOSTYN, KURT SCHRAM, TOM KUNNEN, EDDY RAGNARSSON, LARS-ÅKE DEKKERS, HAROLD F. W. HOPF, TOBY DEVRIENDT, KATIA TSVETANOVA, DIANA CHEW, SOON AIK KIKUCHI, YOSHIAKI VAN BESIEN, ELS ROSSEEL, ERIK MANNAERT, GEERT DE KEERSGIETER, AN CHASIN, ADRIAN KUBICEK, STEFAN DANGOL, ANISH DEMUYNCK, STEVEN BARLA, KATHY MOCUTA, DAN , et al. HORIGUCHI, NAOTO ; (Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires. ECS TRANSACTIONS (ONLINE) , v. 77, p. 19-30, 2017.
NAG, M. ; BHOOLOKAM, A. ; STEUDEL, S. ; Chasin, A. ; MAAS, J. ; GENOE, J. ; MURATA, M. ; GROESENEKEN, G. ; HEREMANS, P. . Medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors. ECS Journal of Solid State Science and Technology , v. 4, p. Q38-Q42, 2015.
BHOOLOKAM, AJAY ; NAG, MANOJ ; CHASIN, ADRIAN ; STEUDEL, SOEREN ; GENOE, JAN ; GELINCK, GERWIN ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . Analysis of frequency dispersion in amorphous In-Ga-Zn-O thin-film transistors. Journal of Information Display , v. 16, p. 31-36, 2015.
ARORA, H. ; MALINOWSKI, P. E. ; Chasin, A. ; CHEYNS, D. ; STEUDEL, S. ; SCHOLS, S. ; HEREMANS, P. . Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors. APPLIED PHYSICS LETTERS , v. 106, p. 143301, 2015.
NAG, MANOJ ; STEUDEL, SOEREN ; BHOOLOKAM, AJAY ; CHASIN, ADRIAN ; ROCKELE, MAARTEN ; MYNY, KRIS ; MAAS, JORIS ; FRITZ, THOMAS ; TRUBE, JUTTA ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . High performance a-IGZO thin-film transistors with mf-PVD SiO as an etch-stop-layer. Journal of the Society for Information Display , v. 22, p. 23-28, 2014.
CHASIN, ADRIAN ; VOLSKIY, VLADIMIR ; LIBOIS, MICHAEL ; MYNY, KRIS ; NAG, MANOJ ; ROCKELE, MAARTEN ; VANDENBOSCH, GUY A. E. ; GENOE, JAN ; GIELEN, GEORGES ; HEREMANS, PAUL . An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags. IEEE Transactions on Electron Devices , v. 61, p. 3289-3295, 2014.
CHASIN, ADRIAN ; SIMOEN, EDDY ; BHOOLOKAM, AJAY ; NAG, MANOJ ; GENOE, JAN ; GIELEN, GEORGES ; HEREMANS, PAUL . Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode. Applied Physics Letters , v. 104, p. 082112, 2014.
CHASIN, ADRIAN ; ZHANG, LEQI ; BHOOLOKAM, AJAY ; NAG, MANOJ ; STEUDEL, SOEREN ; GOVOREANU, BOGDAN ; GIELEN, GEORGES ; HEREMANS, PAUL . High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application. IEEE ELECTRON DEVICE LETTERS , v. 35, p. 642-644, 2014.
KAM, BENJAMIN ; TUNG-HUEI KE ; CHASIN, ADRIAN ; TYAGI, MANAV ; CRISTOFERI, CLAUDIO ; TEMPELAARS, KARIN ; VAN BREEMEN, ALBERT J. J. M. ; MYNY, KRIS ; SCHOLS, SARAH ; GENOE, JAN ; GELINCK, GERWIN H. ; HEREMANS, PAUL . Flexible NAND-Like Organic Ferroelectric Memory Array. IEEE ELECTRON DEVICE LETTERS , v. 35, p. 539-541, 2014.
NAG, MANOJ ; BHOOLOKAM, AJAY ; STEUDEL, SOEREN ; CHASIN, ADRIAN ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . Comparative study of source-drain contact metals for amorphous InGaZnO thin-film transistors. Journal of the Society for Information Display , v. 22, p. 310-315, 2014.
KE, TUNG-HUEI ; MÜLLER, ROBERT ; KAM, BENJAMIN ; ROCKELE, MAARTEN ; CHASIN, ADRIAN ; MYNY, KRIS ; STEUDEL, SOEREN ; OOSTERBAAN, WIBREN D. ; LUTSEN, LAURENCE ; GENOE, JAN ; VAN LEUKEN, LINDA ; VAN DER PUTTEN, BAS ; HEREMANS, PAUL . Scaling down of organic complementary logic gates for compact logic on foil. ORGANIC ELECTRONICS , v. 15, p. 1229-1234, 2014.
NAG, MANOJ ; BHOOLOKAM, AJAY ; STEUDEL, SOEREN ; CHASIN, ADRIAN ; MYNY, KRIS ; MAAS, JORIS ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . Back-channel-etch amorphous indium-gallium-zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation. Japanese Journal of Applied Physics , v. 53, p. 111401, 2014.
NAG, MANOJ ; CHASIN, ADRIAN ; ROCKELE, MAARTEN ; STEUDEL, SOEREN ; MYNY, KRIS ; BHOOLOKAM, AJAY ; TRIPATHI, ASHUTOSH ; VAN DER PUTTEN, BAS ; KUMAR, ABHISHEK ; VAN DER STEEN, JAN-LAURENS ; GENOE, JAN ; LI, FLORA ; MAAS, JORIS ; VAN VEENENDAAL, ERIK ; GELINCK, GERWIN ; HEREMANS, PAUL . Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications. Journal of the Society for Information Display , v. 21, p. 129-136, 2013.
CHASIN, ADRIAN ; NAG, MANOJ ; BHOOLOKAM, AJAY ; MYNY, KRIS ; STEUDEL, SOEREN ; SCHOLS, SARAH ; GENOE, JAN ; GIELEN, GEORGES ; HEREMANS, PAUL . Gigahertz Operation of a-IGZO Schottky Diodes. IEEE Transactions on Electron Devices , v. 60, p. 3407-3412, 2013.
NAG, MANOJ ; ROCKELE, MAARTEN ; STEUDEL, SOEREN ; CHASIN, ADRIAN ; MYNY, KRIS ; BHOOLOKAM, AJAY ; WILLEGEMS, MYRIAM ; SMOUT, STEVE ; VICCA, PETER ; AMEYS, MARC ; KE, TUNG HUEI ; SCHOLS, SARAH ; GENOE, JAN ; VAN DER STEEN, JAN-LAURENS P. J. ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . Novel back-channel-etch process flow based a-IGZO TFTs for circuit and display applications on PEN foil. Journal of the Society for Information Display , v. 21, p. 369-375, 2013.
NAG, MANOJ ; STEUDEL, SOEREN ; CHASIN, ADRIAN ; MYNY, KRIS ; ROCKELE, MAARTEN ; BHOOLOKAM, AJAY ; WILLEGEMS, MYRIAM ; SMOUT, STEVE ; VICCA, PETER ; AMEYS, MARC ; SCHOLS, SARAH ; CHEYNS, DAVID ; GENOE, JAN ; VAN DER STEEN, JAN-LAURENS ; TEMPELAARS, KARIN ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . Paper No 19.3: Back-Channel-Etch Process Flow for a-IGZO TFTs. SID Symposium Digest of Technical Papers , v. 44, p. 285-288, 2013.
CHASIN, Adrian ; MYNY, K. ; PHAM, D. ; Maarten Rockelé ; STEIGER, J. ; BOTNARAS, S. ; WEBER, D. ; HEREMANS, P. . Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag. Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2012 IEEE International , v. I, p. 312-314, 2012.
CHASIN, ADRIAN ; STEUDEL, SOEREN ; MYNY, KRIS ; NAG, MANOJ ; KE, TUNG-HUEI ; SCHOLS, SARAH ; GENOE, JAN ; GIELEN, GEORGES ; HEREMANS, PAUL . High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts. Applied Physics Letters , v. 101, p. 113505, 2012.
GONÇALVES, E.N. ; PALHARES, R.M. ; TAKAHASHI, R.H.C. ; CHASIN, A.N.V. . Robust model reduction of uncertain systems maintaining uncertainty structure. International Journal of Control (Print) , v. 82, p. 2158-2168, 2009.
BURY, E. ; VANDEMAELE, M. ; FRANCO, J. ; Chasin, A. ; TYAGINOV, S. ; VANDOOREN, A. ; RITZENTHALER, R. ; MERTENS, H. ; FORTUNY, J. DIAZ ; HORIGUCHI, N. ; LINTEN, D. ; KACZER, B. . Reliability challenges in Forksheet Devices: (Invited Paper). In: 2023 IEEE International Reliability Physics Symposium (IRPS), 2023, Monterey. 2023 IEEE International Reliability Physics Symposium (IRPS). Monterrey: IEEE, 2023. p. 1.
BURY, E. ; Chasin, A. ; KACZER, B. ; VANDEMAELE, M. ; TYAGINOV, S. ; FRANCO, J. ; RITZENTHALER, R. ; MERTENS, H. ; WECKX, P. ; HORIGUCHI, N. ; LINTEN, D. . Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS), 2022. p. 5A.2-1.
TRUIJEN, B. ; O'SULLIVAN, B. ; ALAM, MD NUR K. ; CLAES, D. ; THESBERG, M. ; ROUSSEL, P. ; Chasin, A. ; VAN DEN BOSCH, G. ; KACZER, B. ; VAN HOUDT, J. . Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. P12-1.
TYAGINOV, STANISLAV ; MAKAROV, ALEXANDER ; EL-SAYED, AL-MOATASEM BELLAH ; CHASIN, ADRIAN ; BURY, ERIK ; JECH, MARKUS ; VANDEMAELE, MICHIEL ; GRILL, ALEXANDER ; KEERSGIETER, AN DE ; VEXLER, MIKHAIL ; ENEMAN, GEERT ; KACZER, BEN . Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. 6A.3-1.
BASTOS, J. P. ; O'SULLIVAN, B. J. ; FRANCO, J. ; TYAGINOV, S. ; TRUIJEN, B. ; Chasin, A. ; DEGRAEVE, R. ; KACZER, B. ; RITZENTHALER, R. ; CAPOGRECO, E. ; LITTA, E. D. ; SPESSOT, A. ; HIGASHI, Y. ; YOON, Y. ; MACHKAOUTSAN, V. ; FAZAN, P. ; HORIGUCHI, N. . Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. 1.
GRILL, A. ; JOHN, V. ; MICHL, J. ; BECKERS, A. ; BURY, E. ; TYAGINOV, S. ; PARVAIS, B. ; CHASIN, A. VAISMAN ; GRASSER, T. ; WALTL, M. ; KACZER, B. ; GOVOREANU, B. . Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. 10A.1-1.
VAN BEEK, SIMON ; CAI, KAIMING ; RAO, SIDDHARTH ; JAYAKUMAR, GANESH ; COUET, SEBASTIEN ; JOSSART, NICO ; CHASIN, ADRIAN ; KAR, GOURI SANKAR . MTJ degradation in SOT-MRAM by self-heating-induced diffusion. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. 4A.2-1.
O'SULLIVAN, B. J. ; TRUIJEN, B. ; PUTCHA, V. ; GRILL, A. ; CHASIN, A ; VAN DEN BOSCH, G. ; KACZER, B. ; ALAM, M. N. K. ; VAN HOUDT, J. . Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. 4A.4-1.
RAVSHER, TARAS ; FANTINI, ANDREA ; Chasin, Adrian Vaisman ; HOUSHMAND SHARIFI, SHAMIN ; HODY, HUBERT ; DEKKERS, HAROLD ; WITTERS, THOMAS ; VAN HOUDT, JAN ; AFANAS'EV, VALERI ; COUET, SEBASTIEN ; KAR, GOURI SANKAR . Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. P10-1.
VANDEMAELE, MICHIEL ; KACZER, BEN ; TYAGINOV, STANISLAV ; BURY, ERIK ; CHASIN, ADRIAN ; FRANCO, JACOPO ; MAKAROV, ALEXANDER ; MERTENS, HANS ; HELLINGS, GEERT ; GROESENEKEN, GUIDO . Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. In: 2022 IEEE International Reliability Physics Symposium (IRPS), 2022, Dallas. 2022 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2022. p. 6A.2-1.
HIBLOT, GASPARD ; RASSOUL, NOUREDINE ; TEUGELS, LIEVE ; DEVRIENDT, KATIA ; Chasin, Adrian Vaisman ; VAN SETTEN, MICHIEL ; BELMONTE, ATTILIO ; DELHOUGNE, ROMAIN ; KAR, GOURI SANKAR . Process-induced charging damage in IGZO nTFTs. In: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Monterey. 2021 IEEE International Reliability Physics Symposium (IRPS). Monterrey: IEEE, 2021. p. 1.
Chasin, A. ; FRANCO, J. ; TRIANTOPOULOS, K. ; DEKKERS, H. ; RASSOUL, N. ; BELMONTE, A. ; SMETS, Q. ; SUBHECHHA, S. ; CLAES, D. ; VAN SETTEN, M. J. ; MITARD, J. ; DELHOUGNE, R. ; AFANAS'EV, V. ; KACZER, B. ; KAR, G. S. . Understanding and modelling the PBTI reliability of thin-film IGZO transistors. In: 2021 IEEE International Electron Devices Meeting (IEDM), 2021, San Francisco. 2021 IEEE International Electron Devices Meeting (IEDM). San Francisco: IEEE, 2021. p. 31.1.1.
VANDEMAELE, MICHIEL ; KACZER, BEN ; TYAGINOV, STANISLAV ; FRANCO, JACOPO ; DEGRAEVE, ROBIN ; CHASIN, ADRIAN ; WU, ZHICHENG ; BURY, ERIK ; XIANG, YANG ; MERTENS, HANS ; GROESENEKEN, GUIDO . The properties, effect and extraction of localized defect profiles from degraded FET characteristics. In: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Monterey. 2021 IEEE International Reliability Physics Symposium (IRPS). Monterrey: IEEE, 2021. p. 1.
SHARIFI, S. HOUSHMAND ; Chasin, A. ; FANTINI, A. ; DEKKERS, H. ; MAO, M. ; NAG, M. ; MERTENS, S. ; RAO, S. ; JOSSART, N. ; CROTTI, D. ; KAR, G. S. . Sub-µm a-IGZO, Fully integrated, Process improved, Vertical diode for Crosspoint arrays. In: 2020 IEEE International Memory Workshop (IMW), 2020, Dresden. 2020 IEEE International Memory Workshop (IMW). Dresen Germany: IEEE, 2020. p. 1.
CHASIN, ADRIAN ; FRANCO, JACOPO ; BURY, ERIK ; RITZENTHALER, ROMAIN ; LITTA, EUGENIO ; SPESSOT, ALESSIO ; HORIGUCHI, NAOTO ; LINTEN, DIMITRI ; KACZER, BEN . Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Dallas. 2020 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2020. p. 1.
WU, C. ; Chasin, A. ; DEMUYNCK, S. ; HORIGUCHI, N. ; CROES, K. . Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 2020, Dallas. 2020 IEEE International Reliability Physics Symposium (IRPS). Dallas: IEEE, 2020. p. 1.
MAKAROV, A. ; KACZER, B. ; ROUSSEL, PH. ; Chasin, A. ; GRILL, A. ; VANDEMAELE, M. ; HELLINGS, G. ; EL-SAYED, A.-M. ; GRASSER, T. ; LINTEN, D. ; TYAGINOV, S. . Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. In: 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, Monterey. 2019 IEEE International Reliability Physics Symposium (IRPS), 2019. p. 1.
VANDEMAELE, MICHIEL ; KACZER, BEN ; TYAGINOV, STANISLAV ; STANOJEVIC, ZLATAN ; MAKAROV, ALEXANDER ; CHASIN, ADRIAN ; BURY, ERIK ; MERTENS, HANS ; LINTEN, DIMITRI ; GROESENEKEN, GUIDO . Full ($V_{mathrm{g}}, V_{mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. In: 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, Monterey. 2019 IEEE International Reliability Physics Symposium (IRPS). Monterey: IEEE, 2019. p. 1.
BURY, E. ; Chasin, A. ; VANDEMAELE, M. ; VAN BEEK, S. ; FRANCO, J. ; KACZER, B. ; LINTEN, D. . Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the ${oldsymbol{V_{G}}, oldsymbol{V_{D}}}$ bias space. In: 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, Monterey. 2019 IEEE International Reliability Physics Symposium (IRPS). Monterey: IEEE, 2019. p. 1.
WU, C. ; Chasin, A. ; PADOVANI, A. ; LESNIEWSKA, A. ; DEMUYNCK, S. ; CROES, K. . Role of Defects in the Reliability of HfO /Si-Based Spacer Dielectric Stacks for Local Interconnects. In: 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, Monterey. 2019 IEEE International Reliability Physics Symposium (IRPS). Monterrey CA: IEEE, 2019. p. 1.
VELOSO, A. ; HIKAVYY, A. ; LOO, R. ; PARASCHIV, V. ; CHAN, B. T. ; RADISIC, D. ; LI, W. ; VERSLUIJS, J. J. ; TEUGELS, L. ; SEBAAI, F. ; FAVIA, P. ; ENEMAN, G. ; BENDER, H. ; VANCOILLE, E. ; SCHEERDER, J. E. ; FLEISCHMANN, C. ; HORIGUCHI, N. ; MATAGNE, P. ; HUYNH-BAO, T. ; Chasin, A. ; SIMOEN, E. ; VECCHIO, E. ; DEVRIENDT, K. ; BRUS, S. ; ROSSEEL, E. . Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits. In: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, San Francisco. 2019 IEEE International Electron Devices Meeting (IEDM), 2019. p. 11.1.1.
ARIMURA, H. ; WOSTYN, K. ; RAGNARSSON, L.-A. ; CAPOGRECO, E. ; Chasin, A. ; CONARD, T. ; BRUS, S. ; FAVIA, P. ; FRANCO, J. ; MITARD, J. ; DEMUYNCK, S. ; HORIGUCHI, N. . Ge oxide scavenging and gate stack nitridation for strained Si Ge pFinFETs enabling 35% higher mobility than Si. In: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, San Francisco. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco CA: IEEE, 2019. p. 29.2.1.
TYAGINOV, S. ; GRILL, A. ; DE KEERSGIETER, A. ; ENEMAN, G. ; LINTEN, D. ; KACZER, B. ; EL-SAYED, A.-M. ; MAKAROV, A. ; Chasin, A. ; ARIMURA, H. ; VANDEMAELE, M. ; JECH, M. ; CAPOGRECO, E. ; WITTERS, L. . Understanding and Physical Modeling Superior Hot-Carrier Reliability of Ge pNWFETs. In: 2019 IEEE International Electron Devices Meeting (IEDM), 2019, San Francisco. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco: IEEE, 2019. p. 21.3.1.
ROUSSEL, PHILIPPE J. ; CHASIN, ADRIAN ; DEMUYNCK, STEVEN ; HORIGUCHI, NAOTO ; LINTEN, DIMITRI ; MOCUTA, ANDA . New methodology for modelling MOL TDDB coping with variability. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Burlingame. 2018 IEEE International Reliability Physics Symposium (IRPS). Burlingame: IEEE, 2018. p. 3A.5-1.
FRANCO, J. ; KACZER, B. ; Chasin, A. ; BURY, E. ; LINTEN, D. . Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Burlingame. 2018 IEEE International Reliability Physics Symposium (IRPS). Burlingame: IEEE, 2018. p. 5A.1-1.
BURY, E. ; Chasin, A. ; KACZER, B. ; CHUANG, K.-H. ; FRANCO, J. ; SIMICIC, M. ; WECKX, P. ; LINTEN, D. . Self-heating-aware CMOS reliability characterization using degradation maps. In: 2018 IEEE International Reliability Physics Symposium (IRPS), 2018, Burlingame. 2018 IEEE International Reliability Physics Symposium (IRPS). Burlingame: IEEE, 2018. p. 2A.3-1.
CHASIN, ADRIAN ; BURY, ERIK ; FRANCO, JACOPO ; KACZER, BEN ; VANDEMAELE, MICHIEL ; ARIMURA, HIROAKI ; CAPOGRECO, ELENA ; WITTERS, LIESBETH ; RITZENTHALER, ROMAIN ; MERTENS, HANS ; HORIGUCHI, NAOTO ; LINTEN, DIMITRI . Understanding the intrinsic reliability behavior of $oldsymbol{n}$ -/ $oldsymbol{p}$ -Si and $oldsymbol{p}$ -Ge nanowire FETs utilizing degradation maps. In: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, San Francisco. 2018 IEEE International Electron Devices Meeting (IEDM), 2018. p. 34.1.1.
RITZENTHALER, R. ; MERTENS, H. ; PENA, V. ; SANTORO, G. ; Chasin, A. ; KENIS, K. ; DEVRIENDT, K. ; MANNAERT, G. ; DEKKERS, H. ; DANGOL, A. ; LIN, Y. ; SUN, S. ; CHEN, Z. ; KIM, M. ; MACHILLOT, J. ; MITARD, J. ; YOSHIDA, N. ; KIM, N. ; MOCUTA, D. ; HORIGUCHI, N. . Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization. In: 2018 IEEE International Electron Devices Meeting (IEDM), 2018, San Francisco. 2018 IEEE International Electron Devices Meeting (IEDM), 2018. p. 21.5.1.
MAKAROV, A. ; TYAGINOV, S. E. ; KACZER, B. ; JECH, M. ; Chasin, A. ; GRILL, A. ; HELLINGS, G. ; VEXLER, M. I. ; LINTEN, D. ; GRASSER, T. . Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology. In: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, San Francisco. 2017 IEEE International Electron Devices Meeting (IEDM), 2017. p. 13.1.1.
KACZER, B. ; RZEPA, G. ; FRANCO, J. ; WECKX, P. ; Chasin, A. ; PUTCHA, V. ; BURY, E. ; SIMICIC, M. ; ROUSSEL, PH. ; HELLINGS, G. ; VELOSO, A. ; MATAGNE, PH. ; GRASSER, T. ; LINTEN, D. . Benchmarking time-dependent variability of junctionless nanowire FETs. In: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Monterey. 2017 IEEE International Reliability Physics Symposium (IRPS), 2017. p. 2D-6.1.
O'SULLIVAN, B.J. ; RITZENTHALER, R. ; SIMOEN, E. ; DENTONI LITTA, E. ; SCHRAM, T. ; Chasin, A. ; LINTEN, D. ; HORIGUCHI, N. ; MACHKAOUTSAN, V ; FAZAN, P ; JI, Y . Gate stack engineering to enhance high-κ/metal gate reliability for DRAM I/O applications. In: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Monterey. 2017 IEEE International Reliability Physics Symposium (IRPS), 2017. p. DG-8.1.
CHASIN, ADRIAN ; FRANCO, JACOPO ; KACZER, BEN ; PUTCHA, VAMSI ; WECKX, PIETER ; RITZENTHALER, ROMAIN ; MERTENS, HANS ; HORIGUCHI, NAOTO ; LINTEN, DIMITRI ; RZEPA, GERHARD . BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors. In: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Monterey. 2017 IEEE International Reliability Physics Symposium (IRPS), 2017. p. 5C-4.1.
BURY, E. ; KACZER, B. ; CHUANG, K. ; FRANCO, J. ; WECKX, P. ; Chasin, A. ; SIMICIC, M. ; LINTEN, D. ; GROESENEKEN, G. . Statistical assessment of the full V G /V D degradation space using dedicated device arrays. In: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Monterey. 2017 IEEE International Reliability Physics Symposium (IRPS), 2017. p. 2D-5.1.
RZEPA, G. ; FRANCO, J. ; SUBIRATS, A. ; JECH, M. ; Chasin, A. ; GRILL, A. ; WALTL, M. ; KNOBLOCH, T. ; STAMPFER, B. ; CHIARELLA, T. ; HORIGUCHI, N. ; RAGNARSSON, L. A. ; LINTEN, D. ; KACZER, B. ; GRASSER, T. . Efficient physical defect model applied to PBTI in high-κ stacks. In: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Monterey. 2017 IEEE International Reliability Physics Symposium (IRPS), 2017. p. XT-11.1.
FRANCO, J. ; WITTERS, L. ; VANDOOREN, A. ; ARIMURA, H. ; SIONCKE, S. ; PUTCHA, V. ; VAIS, A. ; XIE, Q. ; GIVENS, M. ; TANG, F. ; JIANG, X. ; SUBIRATS, A. ; Chasin, A. ; RAGNARSSON, L.-A. ; HORIGUCHI, N. ; KACZER, B. ; LINTEN, D. ; COLLAERT, N. . Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: Demonstration of a suitable gate stack for top and bottom tier nMOS. In: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Monterey. 2017 IEEE International Reliability Physics Symposium (IRPS), 2017. p. 2B-3.1.
CHASIN, ADRIAN ; BURY, ERIK ; KACZER, BEN ; FRANCO, JACOPO ; ROUSSEL, PHILIPPE ; RITZENTHALER, ROMAIN ; MERTENS, HANS ; HORIGUCHI, NAOTO ; LINTEN, DIMITRI ; MOCUTA, ANDA . Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects. In: 2017 IEEE International Electron Devices Meeting (IEDM), 2017, San Francisco. 2017 IEEE International Electron Devices Meeting (IEDM). San Francisco: IEEE, 2017. p. 7.1.1.
MERTENS, H. RITZENTHALER, R. HIKAVYY, A. KIM, M. S. TAO, Z. WOSTYN, K. CHEW, S. A. DE KEERSGIETER, A. MANNAERT, G. ROSSEEL, E. SCHRAM, T. DEVRIENDT, K. TSVETANOVA, D. DEKKERS, H. DEMUYNCK, S. Chasin, A. VAN BESIEN, E. DANGOL, A. GODNY, S. DOUHARD, B. BOSMAN, N. RICHARD, O. GEYPEN, J. BENDER, H. BARLA, K. , et al. MOCUTA, D. HORIGUCHI, N. THEAN, A.V-Y ; Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates. In: 2016 IEEE Symposium on VLSI Technology, 2016, Honolulu. 2016 IEEE Symposium on VLSI Technology, 2016. p. 1.
MERTENS, H. RITZENTHALER, R. Chasin, A. SCHRAM, T. KUNNEN, E. HIKAVYY, A. RAGNARSSON, L.-A. DEKKERS, H. HOPF, T. WOSTYN, K. DEVRIENDT, K. CHEW, S. A. KIM, M. S. KIKUCHI, Y. ROSSEEL, E. MANNAERT, G. KUBICEK, S. DEMUYNCK, S. DANGOL, A. BOSMAN, N. GEYPEN, J. CAROLAN, P. BENDER, H. BARLA, K. HORIGUCHI, N. , et al. MOCUTA, D. ; Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates. In: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, San Francisco. 2016 IEEE International Electron Devices Meeting (IEDM), 2016. p. 19.7.1.
FRANCO, J. ; KACZER, B. ; Chasin, A. ; MERTENS, H. ; RAGNARSSON, L.-A. ; RITZENTHALER, R. ; MUKHOPADHYAY, S. ; ARIMURA, H. ; ROUSSEL, PH. J. ; BURY, E. ; HORIGUCHI, N. ; LINTEN, D. ; GROESENEKEN, G. ; THEAN, A. . NBTI in Replacement Metal Gate SiGe core FinFETs: Impact of Ge concentration, fin width, fin rotation and interface passivation by high pressure anneals. In: 2016 IEEE International Reliability Physics Symposium (IRPS), 2016, Pasadena. 2016 IEEE International Reliability Physics Symposium (IRPS), 2016. p. 4B-2-1.
KE, TUNG-HUEI ; MYNY, KRIS ; CHASIN, ADRIAN ; MULLER, ROBERT ; HEREMANS, PAUL ; STEUDEL, SOEREN . Ultralow power transponder in thin film circuit technology on foil with sub − 1V operation voltage. In: 2014 IEEE International Electron Devices Meeting (IEDM), 2014, San Francisco. 2014 IEEE International Electron Devices Meeting, 2014. p. 26.1.1.
BHOOLOKAM, AJAY ; NAG, MANOJ ; CHASIN, ADRIAN ; STEUDEL, SOEREN ; GENOE, JAN ; GELINCK, GERWIN ; GROESENEKEN, GUIDO ; HEREMANS, PAUL . Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. In: ESSDERC 2014 44th European Solid State Device Research Conference, 2014, Venice Lido. 2014 44th European Solid State Device Research Conference (ESSDERC), 2014. p. 302.
CHASIN, ADRIAN ; VOLSKIY, VLADIMIR ; LIBOIS, MICHAEL ; AMEYS, MARC ; NAG, MANOJ ; ROCKELE, MAARTEN ; MYNY, KRIS ; STEUDEL, SOEREN ; SCHOLS, SARAH ; VANDENBOSCH, GUY A. E. ; DE RAEDT, WALTER ; GENOE, JAN ; GIELEN, GEORGES ; HEREMANS, PAUL . Integrated UHF a-IGZO energy harvester for passive RFID tags. In: 2013 IEEE International Electron Devices Meeting (IEDM), 2013, Washington. 2013 IEEE International Electron Devices Meeting, 2013. p. 11.3.1.
CHASIN, ADRIAN ; STEUDEL, SOEREN ; VANAVERBEKE, FRE ; MYNY, KRIS ; NAG, MANOJ ; KE, TUNG-HUEI ; SCHOLS, SARAH ; GIELEN, GEORGES ; GENOE, JAN ; HEREMANS, PAUL . UHF IGZO Schottky diode. In: 2012 IEEE International Electron Devices Meeting (IEDM), 2012, San Francisco. 2012 International Electron Devices Meeting, 2012. p. 12.4.1-12.4.4.
MYNY, KRIS ; ROCKELE, MAARTEN ; CHASIN, ADRIAN ; PHAM, DUY-VU ; STEIGER, JURGEN ; BOTNARAS, SILVIU ; WEBER, DENNIS ; HEROLD, BERNHARD ; FICKER, JURGEN ; VAN DER PUTTEN, BAS ; GELINCK, GERWIN ; GENOE, JAN ; DEHAENE, WIM ; HEREMANS, PAUL . Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag. In: 2012 IEEE International Solid State Circuits Conference (ISSCC), 2012, San Francisco. 2012 IEEE International Solid-State Circuits Conference, 2012. p. 312.
VAISMAN CHASIN, ADRIAN N. ; SALLES, LUCIANA P. ; DE LIMA MONTEIRO, DAVIES W. . Multi-Efficiency Position-Sensitive Detector with Linearized Response. In: 23rd Symposium on Microelectronics Technology and Devices, 2008, Gramado. ECS Transactions. p. 497.
PARACHA, Ayyaz Mahmood ; BASSET, P. ; CHASIN, Adrian ; POULICHET, Patrick ; BOUROUINA, Tarik Baccarini . A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based on an in-plane Overlap Plate (IPOP) Mechanism.. In: Design, Test, Integration & Packaging of MEMS/MOEMS, 2007, Stressa, Italia. Proceedings of DTIP 2007, 2007.
Gonçalves, Eduardo Nunes ; CHASIN, Adrian ; PALHARES, Reinaldo Martinez ; TAKAHASHI, Ricardo Hiroshi . Redução H2-Hinfi de Modelos de Sistemas Incertos: Aproximação por Modelos Incertos. In: Congresso Brasileiro de Automática, 2006, Salvador. XVI Congresso Brasileiro de Automática, 2006. p. 180-185.
CHASIN, Adrian ; SALES, L. P. ; de LIMA MONTEIRO, D. W. . Triple-Efficiency Optical Quad-Cell with Linearized Response. In: SEMINATEC, 2008, São Paulo. Workshop on semiconductor and micro & nano technology. São Paulo: Seminatec, 2008. v. 1. p. 61-61.
CHASIN, Adrian ; SALES, L. P. ; de LIMA MONTEIRO, D. W. . Multi-Efficiency Position-Sensitive Detector with Linearized Response. 2008. (Apresentação de Trabalho/Congresso).

Projetos de pesquisa

2010 - 2014

Amorphous metal-oxide semiconductor based electronic devices for RF applications on foil., Descrição: Extensive clean-room experience: photolithography, etching processes, metallization, DC and RF sputtering, ebeam, thermal evaporation, low temperature CVD and PECVD. - Organic and metal-oxide semiconductors deposition methods: spin-coating, thermal deposition and sputtering. - Device, circuitry and semiconductor characterization: I-V, C-V, small and large RF signal analysis, DLTS (Deep Level Transient Spectroscopy), Optical Spectroscopy, Photoluminescence, Profilometer, Low Frequency Noise, AFM (Atomic Force Microscopy). - Mask design. , Situação: Concluído; Natureza: Pesquisa. , Alunos envolvidos: Doutorado: (1) . , Integrantes: Adrian Nelson Vaisman Chasin - Coordenador / Paul Heremans - Integrante.
2008 - 2010

Organic memory transistors with a polymer ferro-electric gate dielectric., Situação: Concluído; Natureza: Pesquisa. , Integrantes: Adrian Nelson Vaisman Chasin - Coordenador / Paul Heremans - Integrante.
2007 - 2008

Estudo de layouts de sensores opticos de posição (PSDs), Descrição: Estudo e otimização de sensores ópticos de posição e de frente de onda CMOS dinâmico para aplicação em oftalmologia.. , Situação: Em andamento; Natureza: Pesquisa. , Alunos envolvidos: Graduação: (1) / Doutorado: (1) . , Integrantes: Adrian Nelson Vaisman Chasin - Integrante / Davies Wiliam de Lima Monteiro - Coordenador / Luciana Pedrosa Sales - Integrante.
2006 - 2007

Otimização e realização de uma interface eletrônica para a conversão da energia mecânica em energia elétrica, Descrição: Pesquisa e simulação de diferentes topologias de circuitos eletrônicos para a conversão da energia mecânica en energia elétrica com utilização de um microsistema eletromecânico (MEMS). Realização do circuito discreto e discussão da sua integração ao MEMS.. , Situação: Concluído; Natureza: Pesquisa. , Alunos envolvidos: Graduação: (1) . , Integrantes: Adrian Nelson Vaisman Chasin - Integrante / Philippe Basset - Coordenador., Financiador(es): Ecole Superieure d'Ingenieurs en Eletrotechniquee et Eletronique - Bolsa.
2005 - 2006

Redução de Modelos de Sistemas Lineares Incertos via Otimização, Descrição: O objetivo desse projeto de pesquisa é abordar, por meio de técnicas de otimização, a redução de modelos para sistemas lineares, contínuos ou discretos, e invariantes no tempo, possivelmente sujeitos a incertezas nos parâmetros do modelo, usando como critério para medir o erro de redução as normas H2 e Hinfinito. Este tipo de problema é de grande interesse na engenharia de controle, já que o projeto de controle pode ser facilitado para um sistema de ordem reduzida.. , Situação: Concluído; Natureza: Pesquisa. , Alunos envolvidos: Graduação: (1) / Especialização: (0) / Mestrado acadêmico: (0) / Mestrado profissional: (0) / Doutorado: (0) . , Integrantes: Adrian Nelson Vaisman Chasin - Integrante / Reinaldo Martinez Palhares - Coordenador., Financiador(es): Universidade Federal de Minas Gerais - Bolsa.
2005 - 2006

Estudo de um sistema optico adaptativo., Descrição: Estudo de um sistem optico adaptatvio baseado em um microespelho MEMS e um sensor do tipo CMOS. Tal sistema pode ser utilizado na instrumentação oftalmologica na detecção de aberrações no olho humano.. , Situação: Concluído; Natureza: Pesquisa. , Alunos envolvidos: Graduação: (1) / Mestrado acadêmico: (1) . , Integrantes: Adrian Nelson Vaisman Chasin - Integrante / Davies Wiliam de Lima Monteiro - Coordenador / Antônio Isidório Ferreira Júnior - Integrante.

Prêmios

2007

IELTS, University of Cambridge.

2005

Certificate in Advanced English - CAE, University of Cambridge.

Histórico profissional

Endereço profissional

Interuniversity Microelectronics Centre. , Kasteelpark Arenberg 10, Heverlee, 3001 - Leuven, - Bélgica, Telefone: (32) 16288397, URL da Homepage:

Experiência profissional

2020 - Atual

Interuniversity Microelectronics Centre

Vínculo: Formal labor contract, Enquadramento Funcional: R & D Team leader, Carga horária: 40, Regime: Dedicação exclusiva.

2015 - 2020

Interuniversity Microelectronics Centre

Vínculo: Formal labor contract, Enquadramento Funcional: Pesquisador, Carga horária: 40, Regime: Dedicação exclusiva.

Outras informações:
Reliability Researcher - N10 and below CMOS reliability characterization: TDDB and BTI - Local interconnect reliability Device Reliability and Electrical Characterization Group

2010 - 2014

Interuniversity Microelectronics Centre

Vínculo: Bolsista, Enquadramento Funcional: Pesquisador, Carga horária: 40, Regime: Dedicação exclusiva.

Outras informações:
Extensive clean-room experience: photolithography, etching processes, metallization, DC and RF sputtering, ebeam, thermal evaporation, low temperature CVD and PECVD. - Organic and metal-oxide semiconductors deposition methods: spin-coating, thermal deposition and sputtering. - Device, circuitry and semiconductor characterization: I-V, C-V, small and large RF signal analysis, DLTS (Deep Level Transient Spectroscopy), Optical Spectroscopy, Photoluminescence, Profilometer, Low Frequency Noise, AFM (Atomic Force Microscopy). - Mask design

Atividades

07/2009 - 09/2009
Pesquisa e desenvolvimento, Photovoltech.Linhas de pesquisa

2014 - 2015

NXP Semiconductors N.V.

Vínculo: Celetista, Enquadramento Funcional: Research Scientist, Carga horária: 40, Regime: Dedicação exclusiva.

Outras informações:
Assessment of advanced CMOS technologies - FEOL and BEOL figures-of-merit extraction

2009 - 2009

Photovoltech

Vínculo: Estagiário, Enquadramento Funcional: Auxiliar de pesquisa, Carga horária: 40

Outras informações:
At the research and development (R&D) division, the intern assisted the development of a laser-doping process for selective emitter formation for the next generation of silicon solar cells. These activities included obtaining dopingprofiles, measuring spectral response and current-voltage characteristics, assessing the impact of selective emitters onrecombination and dark diode parameters, among other characterization activities.

2007 - 2007

Freescale Semiconductor

Vínculo: Estagiário, Enquadramento Funcional: Engenheiro de Teste, Carga horária: 40, Regime: Dedicação exclusiva.

Outras informações:
Working as a test engineer, the intern was responsible for the development of personalized hardware and software for testing a new Airbag microcontroller designated to the automobile industry. The software was developed in VSB (Visual Basis for Test) in the IG-XL Teradyne environment and the customized hardware was done in PCB with regular discret components

Atividades

05/2007 - 10/2007
Estágios , Trasportation and Standard Products Group.Estágio realizado, Como engenheiro de teste, o estagiário foi responsável pelo desenvolvimento de um hardware e software para a execução de testes em dois novos produtos designados para o mercado automobilistico.

2006 - 2007

Ecole Superieure d'Ingenieurs en Eletrotechniquee et Eletronique

Vínculo: Bolsista, Enquadramento Funcional: Auxiliar de pesquisa, Carga horária: 20

Atividades

08/2006 - 12/2007
Pesquisa e desenvolvimento, Departamento de Sistema Eletrônicos.Linhas de pesquisa

2007 - 2008

Universidade Federal de Minas Gerais

Vínculo: Auxiliar de pesquisa, Enquadramento Funcional: Colaborador, Carga horária: 20

Outras informações:
Estudo e desenvolvimento de layouts de sensores opticos de posição (SPD), baseados em tecnologia CMOS.

2005 - 2006

Universidade Federal de Minas Gerais

Vínculo: Bolsista de Iniciação Científi, Enquadramento Funcional: Bolsista, Carga horária: 20

2005 - 2006

Universidade Federal de Minas Gerais

Vínculo: Auxiliar de pesquisa, Enquadramento Funcional: Colaborador, Carga horária: 20

Outras informações:
Estudo de um sistema optico adaptativo baseado em um micro-espelho e um sensor do tipo CMOS.